전남대학교

  • 전남대학교
  • 전남대포털

GNB

교수소개

  • home >
  • 교수소개
김하술  이미지
성명
김하술 부교수
연구실
자4-107호
교수전공 및 연구분야
Optical Science & III-V Semiconductor
연락처
(062) 530 - 3353
이메일
hydenkim@jnu.ac.kr
홈페이지
 
약력

Career
 - POSCO Technical Research Lab. Researcher 1995.1~2000.5
 - University of California at Berkeley, Postdoc 2010.7~2011.9
 - Arizona State University at Tempe, Postdoc 2011.10~2012.8
 - Chonnam National University, Physics, Assistant Professor 2012.8 ~ currently

 

Education
 - Chonnam National University, Physics (B.S.) 1983.3-1990.8
 - Pohang University of Science & Technology, Physics (M.A.) 1993.3~1995.2
 - University of Alabama at Huntsville AL, Optical Science & Engineering 2003.8-2005.12
 - Brigham Young University, Provo, UT, EECE 2006.1-2006.7
 - University of New Mexico, NM, Optical Science & Engineering (Ph.D.) 2002.8-2010.7

 

 

연구분야

Research area
 - III-V semiconductor, InAs/GaSb and InAs/InAsSb strained layer superlattice (SLS) material development
 - High temperature operating material and device processing development
 - Barrier device design, nBn structure, multicolor detector
 - Mid infrared and long wave infrared focal plane array (FPA)
 - Nano scale iii-V semiconductors for high mobility electronic device

 

Optical science
 - Infrared optical system for the near IR, mid wave IR and long wave IR detection
 - Radiometry and 3D plasmonic structure for visible and infrared detection
 - Optical sensor development for civilian and military applications

연구실적

-"Dark Current Improvement of the Type-II InAs / GaSb Superlattice Photodetectors by Using a Gate Bias Control", Ha Sul Kim, S. Myers, B. Klein, A. Kazemi, S. Krishna, Jun Oh Kim and Sang Jun Lee, Journal of the Korean Physical Society, Vol. 66, No. 4, pp. L535∼L538, February (2015)

-"High operating temperature interband cascade focal plane arrays", Z.-B. Tian, S. E. Godoy, H. S. Kim,a) T. Schuler-Sandy, J. A. Montoya, and S. Krishna, APPLIED PHYSICS LETTERS 105, 051109 (2014)

-"InAs/GaSb 제2형 응력 초격자 nBn 장적외선 검출소자 설계, 제작 및 특성평가", 김하술, 이 훈, Brianna Klein, Nutan Gautam, Elena A. Plis, Stephen Myers, Sanjay Krishna, 한국진공학회지 제22권 6호, pp.327∼334, (2013)
-"Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices", Nutan Gautam, Stephen Myers, Ajit V. Barve, Brianna Klein, Edward. P. Smith, Dave. R. Rhiger, Ha Sul Kim, Zhao-Bing Tian, Sanjay Krishna, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 49, NO. 2, FEBRUARY (2013)
-"Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices", H. S. Kim, O. O. Cellek, Z. Y. Lin, Z.-Y. He, X.-H. Zhao, S. Liu, H. Li, and Y.-H. Zhang", APPLIED PHYSICS LETTERS 101, (2012)
-"Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors", Hui Fang, Steven Chuang, Kuniharu Takei, Ha Sul Kim, Elena Plis, Chin-Hung Liu, Sanjay Krishna, Yu-Lun Chueh, and Ali Javey, IEEE ELECTRON DEVICE LETTERS Volume: 33 Issue: 4 Pages: 504-506, APR 2012
-" Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors", Kuniharu Takei,Morten Madsen, Hui Fang, Rehan Kapadia, Steven Chuang, Ha Sul Kim, Chin-Hung Liu, E.Plis, Junghyo Nah, Sanjay Krishna, Yu-Lun Chueh, Jing Guo, Ali Javey, Nano Lett. 2012, 12, 2060?2066
-"Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes", Kuniharu Takei, Hui Fang, S. Bala Kumar, Rehan Kapadia, Qun Gao, Morten Madsen, Ha Sul Kim, Chin-Hung Liu, Yu-Lun Chueh, Elena Plis, Sanjay Krishna, Hans A. Bechtel, Jing Guo, Ali Javey, Nano Lett. 2011, 11, 5008?5012
-"Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness", Kuniharu Takei, Steven Chuang, Hui Fang, Rehan Kapadia, Chin-Hung Liu, Junghyo Nah, Ha Sul Kim, E. Plis, Sanjay Krishna, Yu-Lun Chueh, Ali Javey, APPLIED PHYSICS LETTERS 99, 103507 (2011)
-"Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors", E. Plis, M.N. Kutty, S. Myers, H.S. Kim, N. Gautam, L.R. Dawson, S. Krishna, Infrared Physics & Technology 54 (2011) 252?257
-" Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection", N. Gautam, H.S. Kim, S. Myers, E. Plis, M.N. Kutty, Mikhail Naydenkov, B. Klein, L.R. Dawson, S. Krishna, Infrared Physics & Technology 54 (2011) 273?277
-"Ultrathin body InAs tunneling field-effect transistors on Si substrates", Alexandra C. Ford, Chun Wing Yeung, Steven Chuang, Ha Sul Kim, Elena Plis, Sanjay Krishna, Chenming Hu, Ali Javey, APPLIED PHYSICS LETTERS 98, 113105 (2011)
-"Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator", Hui Fang,, Morten Madsen, Carlo Carraro, Kuniharu Takei, Ha Sul Kim, Elena Plis, Szu-Ying Chen, Sanjay Krishna, Yu-Lun Chueh, Roya Maboudian, Ali Javey, APPLIED PHYSICS LETTERS 98, 012111 (2011)
-"Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors", Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia, Steven Chuang, Hui Fang, Paul W. Leu, Kartik Ganapathi, Elena Plis, Ha Sul Kim, Szu-Ying Chen, Morten Madsen, Alexandra C. Ford, Yu-Lun Chueh, Sanjay Krishna, Sayeef Salahuddin, Ali Javey, 286, Nature, Vol 468, 11 November (2010)
-" Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation", H. S. Kim (김하술), E. Plis, N.Gautam, S.Myers, Y.Sharma, L. R. Dawson, S. Krishna, APPLIED PHYSICS LETTERS 97, 143512 (2010)
-" Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate", E Plis, J B Rodriguez, G Balakrishnan, YD Sharma, H S Kim, T Rotter, S Krishna, Semicond. Sci. Technol. 25 (2010) 085010
-"Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers", N. Gautam, H. S. Kim, M. N. Kutty, E. Plis, L. R. Dawson, S. Krishna, APPLIED PHYSICS LETTERS 96, 231107 (2010)
-"Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection", E. Plis, A.Khoshakhlagh, S. Myers, H. S.Kim, N. Gautam, Y. D. Sharma, S. Krishna, S. J. Lee, S. K. Noh, J. Vac. Sci. Technol. B, Vol. 28, No. 3, May/Jun 2010
-"Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation", H. S. Kim (김하술), E. Plis, A. Khoshakhlagh, S. Myers, N. Gautam, Y. D. Sharma, L. R. Dawson, S. Krishna, S. J. Lee, S. K. Noh, APPLIED PHYSICS LETTERS 96, 033502 (2010)
-"InAs/GaSb strained layer superlattice detectors with nBn design", Elena Plis, Stephen Myers, Arezou Khoshakhlagh, Ha Sul Kim, Yagya Sharma, Nutan Gautam, Ralph Dawson,Sanjay Krishna, Infrared Physics & Technology 52 (2009) 335?339
-"The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors", Stephen Myers, Elena Plis, Arezou Khoshakhlagh, Ha Sul Kim, Yagya Sharma, Ralph Dawson, Sanjay Krishna, Aaron Gin, APPLIED PHYSICS LETTERS 95, 121110 (2009)
-"Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors", E. Plis, H. S. Kim, G. Bishop, S. Krishna, K. Banerjee, S. Ghosh, APPLIED PHYSICS LETTERS 93, 123507 (2008)
-"N-type ohmic contact on type-II InAs/GaSb strained layer superlattices", Kim, H.S. ; Plis,E. ; Rodriguez,J.B. ; Bishop, G.; Sharma, Y.D. ; Krishna, S. ELECTRONICS LETTERS 3rd July 2008 Vol. 44 No. 14
-"Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design", H. S. Kim, E. Plis, J. B. Rodriguez, G. D. Bishop, Y. D. Sharma, L. R. Dawson, S. Krishna, J. Bundas, R. Cook, D. Burrows, R. Dennis, K. Patnaude, A. Reisinger, M.Sundaram, APPLIED PHYSICS LETTERS 92, 183502 (2008)
-"nBn detectors based on InAs/GaSb type-II strain layer superlattice", G. Bishop, E. Plis, J. B. Rodriguez, Y. D. Sharma, H. S. Kim, L. R. Dawson, and S. Krishna, J. Vac. Sci. Technol. B 26" 3, May/Jun 2008
-"Bias dependent dual band response from InAs/Ga(In)Sb type II strain layer superlattice detectors", A. Khoshakhlagh, J. B. Rodriguez, E. Plis, G. D. Bishop, Y. D. Sharma, H. S. Kim,L. R. Dawson, and S. Krishna, APPLIED PHYSICS LETTERS 91, 263504 (2007)
-""Type II InAs/GaSb strain layer superlattice detectors with p-on-n polarity", E. Plis, J. B. Rodriguez, H. S. Kim, G. Bishop, Y. D. Sharma, L. R. Dawson, and S. Krishna, APPLIED PHYSICS LETTERS 91, 133512 (2007)
-"nBn structure based on InAs/GaSb type-II strained layer superlattices", J. B. Rodriguez, E. Plis, G. Bishop, Y. D. Sharma, H. Kim, L. R. Dawson, S. Krishna, APPLIED PHYSICS LETTERS 91, 043514 (2007)