물리colloquium

주제 : Electronic Interactions in Atomoically- designed Oxide Heterostructures

발 표 요 약 :

Complex oxides exhibit a wide range of fascinating properties desirable for advanced electronic, spintronic, magnetoelectric, neuromorphic, and novel quantum devices. More importantly, the physical properties of oxide materials can be coupled by stacking them to build heterostructures. In particular, electronic interactions at the heterointerfaces may lead to emergent phenomena, providing unexpected but valuable scientific insights. In this talk, I will first introduce one of the recently-observed emergent phenomena, the two-dimensional hole gas (2DHG) in oxide heterostructures. This result revealed that the electronic interaction along with precise control over point defects enabled the quasi-2D hole conduction at oxide heterointerfaces. In addition, I will also introduce a novel way to hybridize physical properties of oxide materials, building heterostructures by stacking free-standing oxide membranes. We have successfully achieved strain-mediated magnetoelectric coupling between ferroelectric and ferromagnetic oxide membranes. This result suggests that a new field of research, particularly in terms of strong interactions between completely different oxide materials, is just opened up.

- 연 사 : 이형우 교수 (아주대학교 물리학과)

- 일 시 : 2021년 5월 13일(목요일) 오후 4시 30분

- 장 소 : 원격강의

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